三硅醚

三硅醚（CAS 12597-37-4）：分子式 Si、分子量 28.085。

产品概览

应用领域

登记用途：Uses: Used to synthesize silanes and silicones、to produce ferrosilicon and silicon copper alloys、and to manufacture transistors、diodes、and semiconductors. [ACGIH] Does not occur free in nature、but is found in silicon dioxide (silica) & in various silicates.、Semiconductor Manufacturing [Category: Industry]、Silicon-used to make some the earliest photovoltaic (PV) devices-is still the most popular material for solar cells. To be useful as a semiconductor material in solar cells、silicon must be refined to a purity of 99.9999%.、In making silanes and silicones ...、In the manufacturing transistors、silicon diodes and similar semiconductors. For making alloys such as ferrosilicon、silicon bronze、silicon copper. As a reducing agent like aluminum in high temperature reactions.、Semiconductor in solid-state devices (transistors、photovoltaic cells、computer circuitry、rectifiers、etc.)、organosilicon compounds、silicon carbide、alloying agent in steels、aluminum、copper、bronze、and iron (ferrosilicon)、cermets and special refractories、halogenated silanes、spring steels、deoxidizer in steel manufacture.、Synthetic Polymer MALDI Matrix Compounds、Industry Uses: Intermediate、Heat stabilizer、Hardener、Flocculating agent、Flame retardant、Not Known or Reasonably Ascertainable、Filler、Soil amendments (fertilizers)、Stabilizing agent、Semiconductor and photovoltaic agent、Fuel agents、Anti-adhesive、cohesive、Alloys、Binder、Other、Consumer Uses: Semiconductor and photovoltaic agent、Intermediate、Flux agent、Other (specify)、Methods of Manufacturing: Prepared industrially by carbon reduction of silica in an electric arc furnace. Purification by zone refining. Very pure silicon is obtained by decomposition of silicon tetrachloride. ... By thermal decomposition of a chlorosilane.、AMORPHOUS SILICON CAN BE PREPD AS BROWN POWDER WHICH CAN BE EASILY MELTED OR VAPORIZED. ... CZOCHRALSKI PROCESS COMMONLY USED TO PRODUCE SINGLE CRYSTALS ... FOR SOLID-STATE OR SEMICONDUCTOR DEVICES. HYPERPURE ... PREPD BY THERMAL DECOMP OF ULTRA-PURE TRICHLOROSILANE IN A HYDROGEN ATMOSPHERE & BY VACUUM ZONE FLOAT PROCESS.、Crystalline silicon is made commercially (96-98% pure) in an electric furnace by heating SiO2 with carbon、followed by zone refining. It can be purified to 99.7% by leaching. The ultrapure semiconductor grade (99.97%) is obtained by reduction of purified silicon tetrachloride or trichlorosilane with purified hydrogen、the silicon is deposited on hot filaments (800 °C) of tantalum or tungsten. In a one-step method、sodium fluorosilicate is reacted with sodium、the heat produced being sufficient to form silicon tetrafluoride、this、when reacted with sodium yields high-purity silicon and sodium fluoride. The process requires no heat except that produced by the original reaction.、To create silicon in a single-crystal state、we must first melt high-purity silicon. We then cause it to reform or solidify very slowly in contact with a single crystal "seed." The silicon adapts to the pattern of the single-crystal seed as it cools and gradually solidifies. ... This process is "growing" a new rod (often called a "boule") of single-crystal silicon out of molten silicon. Several different processes can be used to grow a boule of single-crystal silicon. The most established and dependable processes are the Czochralski (Cz)method and the float-zone (FZ) technique. In the Czochralski process、a seed crystal is dipped into a crucible of molten silicon and withdrawn slowly、pulling a cylindrical single crystal as the silicon crystallizes on the seed. In the float-zone process、a silicon rod is set atop a seed crystal and then lowered through an electromagnetic coil. The coil's magnetic field induces an electric field in the rod、heating and melting the interface between the rod and the seed. Single-crystal silicon forms at the interface、growing upward as the coils are slowly raised. Once the single-crystal rods are produced、by either the Cz or FZ method、they must be sliced or sawn to form thin wafers. ... The resulting thin wafers are then doped to produce the necessary electric field. They are then treated with a coating to reduce reflection、and coated with electrical contacts to form functioning PV cells.、For more Methods of Manufacturing (Complete) data for Silicon、Elemental (8 total)、please visit the HSDB record page.、Impurities: Impurities: Boron、garium、indium、germanium、tin、phosphorus、arsenic、antimony、oxygen、sulfur、iron、tellurium、Formulations、Preparations: GRADES: FERROSILICON、REGULAR (97% SILICON)、SEMICONDUCTOR OR HYPERPURE (99.97% SILICON)、AMORPHOUS、Specifications and standards for the various grades of silicon have been thoroughly detailed by the American Society for Testing Materials (ASTM)、which、recommends that the producer furnish with each silicon shipment an analysis showing its Si content、and on request、to include content of Carbon、Sulfur、Phosphorus、Aluminum and Manganese. At present、there are 10 different grades based primarily on silicon content and、or additive elements.、Although the metallurgical silicon industry depends on product purity in the 95-99% range at best、impurities in semiconductor-grade silicon are measured in parts per billion. ... Semiconductor applications require single-crystal silicon.、Consumption Patterns: ALUMINUM ALLOYS、54%、MFR OF SILICONES、40%、STEEL ALLOYS、2%、MISCELLANEOUS USES、4% (1979)、Transportation、32%、20%、machinery、17%、construction、13%、and other、18% (1986)、Most ferrosilicon was consumed in the ferrous foundry and steel industries、predominantly in the eastern part of the United States. The main consumers of silicon metal were producers of aluminum and aluminum alloys and the chemical industry. The semiconductor and solar industries、which manufacture chips for。

技术档案

这个产品是什么

三硅醚 是一种化工化合物，登记 CAS 号为 12597-37-4，分子式 Si（分子量 28.085）。

识别信息

登记 CAS 号：12597-37-4

其分子式 Si 由 1 个硅 组成。

别名/同义词：三硅醚 · trisilirane

常见问题

PubChem 公开数据