磷化铟（CAS 22398-80-7）：分子式 InP、分子量 145.792。
| CAS号 | 22398-80-7 |
|---|---|
| 分子式 | InP |
| 分子量 | 145.792 |
| 熔点 | 1070 °C |
| 应用领域 | Uses: Used in semiconductors、lasers、and solar cells、[Hawley] Used for laser diodes in fiber optic communication systems、[HSDB]、Semiconductor Manufacturing [Category: Industry]、Electronic grade in semiconductor devices、injection lasers、and experimental solar cells.、In electronics for research on semiconductors、Used primarily for the fabrication of optoelectronic devices.、... Used in the fabrication of laser diodes、LEDs、heterojunction bipolar transistors for optoelectronic integration、and in solar cells. Indium phosphide is also used in certain niche areas such as high-performance ICs、integrated circuits、. The use of indium phosphide in field effect transistor ICs is being driven by two application areas: microelectronics、where indium-aluminium arsenide、indium-gallium arsenide、indium phosphide-based high electron mobility transistors are used in millimetre-wave frequencies、and optoelectronics、where indium phosphide-based field effect transistors are incorporated into long-wavelength optoelectronic components such as lasers and photodetectors in optoelectronic ICs.、For more Uses (Complete) data for INDIUM PHOSPHIDE (7 total)、please visit the HSDB record page.、Indium phosphide is a semiconductor used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap、making it useful for optoelectronics devices like laser diodes. (L986)、Methods of Manufacturing: Single crystals of indium phosphide for the manufacture of semiconductor wafers are prepared by the liquid encapsulated Czochralski method. In this method、a single crystal is pulled through a boric oxide liquid encapsulant starting from a single crystal seed and a melt of polycrystalline indium phosphide. For specifications that require doping、the dopant (Fe、S、Sn or Zn)、is added to the melt before extrusion of the single crystal. High pressure is applied inside the chamber to prevent decomposition of the indium phosphide. The single crystal is shaped into a cylinder of the appropriate diameter by grinding. The crystal is then sliced into wafers.、Indium phosphide is also obtained by thermal decomposition of a mixture of a trialkyl indium compound and phosphine (PH3).、Indium combines with several non-metallic elements、including phosphorus、to form semiconducting compounds. Indium phosphide is prepared by direct combination of the highly-purified elements at elevated temperature and pressure under controlled conditions.、Prepared from white phosphorus and indium iodide at 400 °C、... From phosphorus vapor and heated indium metal.、General Manufacturing Information: Indium phosphide (InP): ACTIVE、Gallium arsenide can substitute for indium phosphide in solar cells and in many semiconductor applications.、One of the key advantages of indium phosphide is its potential for the fabrication of very small devices. Because indium phosphide and its ternary (InGaAs) and quaternary (InGaAsP) derivatives have relatively higher refractive indices than those of other optical materials、these compounds allow for devices with much sharper and smaller bends. As their energy band gap is also closer to light energy、electro-optical effects are stronger than those in other materials (which again translates into shorter distances and lower drive voltages). As a result、extremely small devices can be produced: dice are typically < 5 mm and for many functions (e.g. lasers、modulators) they are 1 mm or less.、This research work investigated the physical and chemical properties of a new type of wastewater produced from the semiconductor industry. The wastewater generated from indium phosphide (InP) wafer backgrinding and sawing processes was characterized in term of its particle size distribution (PSD)、zeta potential、suspended and dissolved solids、total organic carbon、and turbidity. The wastewater contained high concentration of fine InP dusts with a size ranging from 0.07 - 1.44 mm. In spite of its high concentration of suspended solids resulting in high turbidity up to 371 NTU、nephelometric turbidity unit、the wastewater contained very low organic matters (TOC < 2.2 mg L(-1)) and other inorganic impurities (SO4(2-) < 0.21 mg L(-1) and Na+ < 0.16 mg L(-1)). Based on the experimental data collected、the treatment technologies using chemical precipitation and ultrafiltration were applied to the wastewater. Both processes could effectively remove InP particles from the wastewater、however the coagulants in chemical precipitation introduced other ionic contents into the process resulting in difficulties of water recycling in the later stage. In comparison、ultrafiltration was more promising for InP wastewater treatment and recycling. Based on the results of this study、a full-scale UF system was built in a local semiconductor plant and it has successfully reclaimed water from the InP wastes for the past six months without any quality issue being raised.、An electrothermal atomic absorption (ETAAS) method for the determination of traces of iron (0.1-1.0 microgram g-1) in Fe-doped indium phosphide (InP) has been developed. In order to overcome the indium matrix-effect and to achieve a useful detection limit、a preliminary solvent-extraction of Fe(III) with acetylacetone (HAA) is necessary. After sample dissolution with hydrochloric acid (1 + 1) the digest is evaporated to dryness、Fe(II) is oxidized to Fe(III) with nitric acid、the residue is dissolved in 0.01 mol L-1 HCl and the iron is extracted at pH 2.0 with 0.5 mol L-1 HAA in toluene. The organic phase is injected into the graphite furnace and the iron is directly evaluated by external organic standard calibration. The limit of detection (3SB) resulting from further in-situ preconcentration is 0.03 microgram g-1. When the method was applied to the analysis of real samples containing 0.2-0.7 microgram g-1 Fe、the RSD was in the range 8-21%. Results were |
登记用途：Uses: Used in semiconductors、lasers、and solar cells、[Hawley] Used for laser diodes in fiber optic communication systems、[HSDB]、Semiconductor Manufacturing [Category: Industry]、Electronic grade in semiconductor devices、injection lasers、and experimental solar cells.、In electronics for research on semiconductors、Used primarily for the fabrication of optoelectronic devices.、... Used in the fabrication of laser diodes、LEDs、heterojunction bipolar transistors for optoelectronic integration、and in solar cells. Indium phosphide is also used in certain niche areas such as high-performance ICs、integrated circuits、. The use of indium phosphide in field effect transistor ICs is being driven by two application areas: microelectronics、where indium-aluminium arsenide、indium-gallium arsenide、indium phosphide-based high electron mobility transistors are used in millimetre-wave frequencies、and optoelectronics、where indium phosphide-based field effect transistors are incorporated into long-wavelength optoelectronic components such as lasers and photodetectors in optoelectronic ICs.、For more Uses (Complete) data for INDIUM PHOSPHIDE (7 total)、please visit the HSDB record page.、Indium phosphide is a semiconductor used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap、making it useful for optoelectronics devices like laser diodes. (L986)、Methods of Manufacturing: Single crystals of indium phosphide for the manufacture of semiconductor wafers are prepared by the liquid encapsulated Czochralski method. In this method、a single crystal is pulled through a boric oxide liquid encapsulant starting from a single crystal seed and a melt of polycrystalline indium phosphide. For specifications that require doping、the dopant (Fe、S、Sn or Zn)、is added to the melt before extrusion of the single crystal. High pressure is applied inside the chamber to prevent decomposition of the indium phosphide. The single crystal is shaped into a cylinder of the appropriate diameter by grinding. The crystal is then sliced into wafers.、Indium phosphide is also obtained by thermal decomposition of a mixture of a trialkyl indium compound and phosphine (PH3).、Indium combines with several non-metallic elements、including phosphorus、to form semiconducting compounds. Indium phosphide is prepared by direct combination of the highly-purified elements at elevated temperature and pressure under controlled conditions.、Prepared from white phosphorus and indium iodide at 400 °C、... From phosphorus vapor and heated indium metal.、General Manufacturing Information: Indium phosphide (InP): ACTIVE、Gallium arsenide can substitute for indium phosphide in solar cells and in many semiconductor applications.、One of the key advantages of indium phosphide is its potential for the fabrication of very small devices. Because indium phosphide and its ternary (InGaAs) and quaternary (InGaAsP) derivatives have relatively higher refractive indices than those of other optical materials、these compounds allow for devices with much sharper and smaller bends. As their energy band gap is also closer to light energy、electro-optical effects are stronger than those in other materials (which again translates into shorter distances and lower drive voltages). As a result、extremely small devices can be produced: dice are typically < 5 mm and for many functions (e.g. lasers、modulators) they are 1 mm or less.、This research work investigated the physical and chemical properties of a new type of wastewater produced from the semiconductor industry. The wastewater generated from indium phosphide (InP) wafer backgrinding and sawing processes was characterized in term of its particle size distribution (PSD)、zeta potential、suspended and dissolved solids、total organic carbon、and turbidity. The wastewater contained high concentration of fine InP dusts with a size ranging from 0.07 - 1.44 mm. In spite of its high concentration of suspended solids resulting in high turbidity up to 371 NTU、nephelometric turbidity unit、the wastewater contained very low organic matters (TOC < 2.2 mg L(-1)) and other inorganic impurities (SO4(2-) < 0.21 mg L(-1) and Na+ < 0.16 mg L(-1)). Based on the experimental data collected、the treatment technologies using chemical precipitation and ultrafiltration were applied to the wastewater. Both processes could effectively remove InP particles from the wastewater、however the coagulants in chemical precipitation introduced other ionic contents into the process resulting in difficulties of water recycling in the later stage. In comparison、ultrafiltration was more promising for InP wastewater treatment and recycling. Based on the results of this study、a full-scale UF system was built in a local semiconductor plant and it has successfully reclaimed water from the InP wastes for the past six months without any quality issue being raised.、An electrothermal atomic absorption (ETAAS) method for the determination of traces of iron (0.1-1.0 microgram g-1) in Fe-doped indium phosphide (InP) has been developed. In order to overcome the indium matrix-effect and to achieve a useful detection limit、a preliminary solvent-extraction of Fe(III) with acetylacetone (HAA) is necessary. After sample dissolution with hydrochloric acid (1 + 1) the digest is evaporated to dryness、Fe(II) is oxidized to Fe(III) with nitric acid、the residue is dissolved in 0.01 mol L-1 HCl and the iron is extracted at pH 2.0 with 0.5 mol L-1 HAA in toluene. The organic phase is injected into the graphite furnace and the iron is directly evaluated by external organic standard calibration. The limit of detection (3SB) resulting from further in-situ preconcentration is 0.03 microgram g-1. When the method was applied to the analysis of real samples containing 0.2-0.7 microgram g-1 Fe、the RSD was in the range 8-21%. Results were。
磷化铟 是一种化工化合物，登记 CAS 号为 22398-80-7，分子式 InP（分子量 145.792）。
登记 CAS 号：22398-80-7
其分子式 InP 由 1 个铟、1 个磷 组成。
别名/同义词：磷化铟 · INDIUM PHOSPHIDE
磷化铟 的 CAS 登记号为 22398-80-7。
分子式 InP，分子量 145.792。
别名/同义词：磷化铟、INDIUM PHOSPHIDE。
登记用途：Uses: Used in semiconductors、lasers、and solar cells、[Hawley] Used for laser diodes in fiber optic communication systems、[HSDB]、Semiconductor Manufacturing [Category: Industry]、Electronic grade in semiconductor devices、injection lasers、and experimental solar cells.、In electronics for research on semiconductors、Used primarily for the fabrication of optoelectronic devices.、... Used in the fabrication of laser diodes、LEDs、heterojunction bipolar transistors for optoelectronic integration、and in solar cells. Indium phosphide is also used in certain niche areas such as high-performance ICs、integrated circuits、. The use of indium phosphide in field effect transistor ICs is being driven by two application areas: microelectronics、where indium-aluminium arsenide、indium-gallium arsenide、indium phosphide-based high electron mobility transistors are used in millimetre-wave frequencies、and optoelectronics、where indium phosphide-based field effect transistors are incorporated into long-wavelength optoelectronic components such as lasers and photodetectors in optoelectronic ICs.、For more Uses (Complete) data for INDIUM PHOSPHIDE (7 total)、please visit the HSDB record page.、Indium phosphide is a semiconductor used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap、making it useful for optoelectronics devices like laser diodes. (L986)、Methods of Manufacturing: Single crystals of indium phosphide for the manufacture of semiconductor wafers are prepared by the liquid encapsulated Czochralski method. In this method、a single crystal is pulled through a boric oxide liquid encapsulant starting from a single crystal seed and a melt of polycrystalline indium phosphide. For specifications that require doping、the dopant (Fe、S、Sn or Zn)、is added to the melt before extrusion of the single crystal. High pressure is applied inside the chamber to prevent decomposition of the indium phosphide. The single crystal is shaped into a cylinder of the appropriate diameter by grinding. The crystal is then sliced into wafers.、Indium phosphide is also obtained by thermal decomposition of a mixture of a trialkyl indium compound and phosphine (PH3).、Indium combines with several non-metallic elements、including phosphorus、to form semiconducting compounds. Indium phosphide is prepared by direct combination of the highly-purified elements at elevated temperature and pressure under controlled conditions.、Prepared from white phosphorus and indium iodide at 400 °C、... From phosphorus vapor and heated indium metal.、General Manufacturing Information: Indium phosphide (InP): ACTIVE、Gallium arsenide can substitute for indium phosphide in solar cells and in many semiconductor applications.、One of the key advantages of indium phosphide is its potential for the fabrication of very small devices. Because indium phosphide and its ternary (InGaAs) and quaternary (InGaAsP) derivatives have relatively higher refractive indices than those of other optical materials、these compounds allow for devices with much sharper and smaller bends. As their energy band gap is also closer to light energy、electro-optical effects are stronger than those in other materials (which again translates into shorter distances and lower drive voltages). As a result、extremely small devices can be produced: dice are typically < 5 mm and for many functions (e.g. lasers、modulators) they are 1 mm or less.、This research work investigated the physical and chemical properties of a new type of wastewater produced from the semiconductor industry. The wastewater generated from indium phosphide (InP) wafer backgrinding and sawing processes was characterized in term of its particle size distribution (PSD)、zeta potential、suspended and dissolved solids、total organic carbon、and turbidity. The wastewater contained high concentration of fine InP dusts with a size ranging from 0.07 - 1.44 mm. In spite of its high concentration of suspended solids resulting in high turbidity up to 371 NTU、nephelometric turbidity unit、the wastewater contained very low organic matters (TOC < 2.2 mg L(-1)) and other inorganic impurities (SO4(2-) < 0.21 mg L(-1) and Na+ < 0.16 mg L(-1)). Based on the experimental data collected、the treatment technologies using chemical precipitation and ultrafiltration were applied to the wastewater. Both processes could effectively remove InP particles from the wastewater、however the coagulants in chemical precipitation introduced other ionic contents into the process resulting in difficulties of water recycling in the later stage. In comparison、ultrafiltration was more promising for InP wastewater treatment and recycling. Based on the results of this study、a full-scale UF system was built in a local semiconductor plant and it has successfully reclaimed water from the InP wastes for the past six months without any quality issue being raised.、An electrothermal atomic absorption (ETAAS) method for the determination of traces of iron (0.1-1.0 microgram g-1) in Fe-doped indium phosphide (InP) has been developed. In order to overcome the indium matrix-effect and to achieve a useful detection limit、a preliminary solvent-extraction of Fe(III) with acetylacetone (HAA) is necessary. After sample dissolution with hydrochloric acid (1 + 1) the digest is evaporated to dryness、Fe(II) is oxidized to Fe(III) with nitric acid、the residue is dissolved in 0.01 mol L-1 HCl and the iron is extracted at pH 2.0 with 0.5 mol L-1 HAA in toluene. The organic phase is injected into the graphite furnace and the iron is directly evaluated by external organic standard calibration. The limit of detection (3SB) resulting from further in-situ preconcentration is 0.03 microgram g-1. When the method was applied to the analysis of real samples containing 0.2-0.7 microgram g-1 Fe、the RSD was in the range 8-21%. Results were。
磷化铟（CAS 22398-80-7）的独立参考数据，整理自公开化学数据库。
| CAS 号 | 22398-80-7 |
|---|---|
| PubChem CID | 31170 |
| 分子式 | InP |
| IUPAC 名称 | indiganylidynephosphane |
| UNII（FDA） | SD36LG60G1 |
| Molecular Weight | 145.792 |
|---|---|
| Hydrogen Bond Donor Count | 0 |
| Hydrogen Bond Acceptor Count | 0 |
| Rotatable Bond Count | 0 |
| Exact Mass | 145.8776408 |
| Monoisotopic Mass | 145.8776408 |
| Topological Polar Surface Area | 0 |
| Heavy Atom Count | 2 |
| Melting Point | 1070 °C |
|---|---|
| Density | 4.81 g/cu cm |
INDIUM PHOSPHIDE; 22398-80-7; Indium phosphide (InP); Indium(III) phosphide; Indium monophosphide; indiganylidynephosphane; SD36LG60G1; DTXSID3031444; Indium (III) phosphide; RefChem:148161; DTXCID1011444; 244-959-5; HSDB 6935; EINECS 244-959-5; UNII-SD36LG60G1; CCRIS 8799
| 已通报的危害声明 | H350, H372, H361 (94.3%), H373 |
|---|
磷化铟 · CAS 22398-80-7 · InP. UNII SD36LG60G1. Melting Point: 1070 °C; Density: 4.81 g/cu cm.
数据来源：PubChem / Wikidata；与随货 COA 不一致时以 COA 为准。
English page: INDIUM PHOSPHIDE